Solid state image pickup device and manufacturing method...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S072000, C257SE21352

Reexamination Certificate

active

11078628

ABSTRACT:
A method of manufacturing a solid-state image pickup device comprises a process for forming a plurality of photoelectric conversion elements PD within a semiconductor substrate4, a process for forming an interconnection portion, having an interconnection layer8in an insulating layer7, on the surface side of the semiconductor substrate4, a process for forming an adhesive layer, made of a material cured at a temperature lower than a deterioration starting temperature of the interconnection layer8, on the surface of the interconnection portion and bonding a supporting substrate30to the surface side of the interconnection portion through the adhesive layer9by heat treatment at a temperature lower than the deterioration starting temperature of the interconnection layer8and a process for decreasing a thickness of the semiconductor substrate4from the back side. A solid-state image pickup device manufacturing method can bond the supporting substrate30to the surface side of the interconnection portion through the adhesive layer9without exerting a thermal influence upon the interconnection layer8that was previously formed on the surface side of the semiconductor substrate4.

REFERENCES:
patent: 6352875 (2002-03-01), Hayashi et al.
patent: 6661025 (2003-12-01), Hirabayashi
patent: 09-260699 (1997-10-01), None
patent: 2003-031785 (2003-01-01), None

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