Solid-state image pickup device and manufacturing method...

Details Solid-state image pickup device and manufacturing method... Solid-state image pickup device and manufacturing method...

2011-06-21

2011-06-21

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S042000, C438S065000, C257S292000

Reexamination Certificate

active

07964426

ABSTRACT:
A solid-state image pickup device is provided in which a pixel forming region4and a peripheral circuit forming region20are formed on the same semiconductor substrate, a first element isolation portion is formed by an element isolation layer21in which an insulating layer is buried into a semiconductor substrate10in the peripheral circuit forming region20, a second element isolation portion is composed of an element isolation region11formed within the semiconductor substrate10and an element isolation layer12projected in the upper direction from the semiconductor substrate10in the pixel forming region4and an element isolation layer21of the first element isolation portion and the element isolation layer12of the second element isolation portion contain the same insulating layers17, 18and19. This solid-state image pickup device has a structure capable of suppressing a noise relative to a pixel signal and which can be microminiaturized in the peripheral circuit forming region.

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