Solid-state image pickup device and fabrication method thereof

Details Solid-state image pickup device and fabrication method thereof Solid-state image pickup device and fabrication method thereof

2007-06-12

2007-06-12

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S223000, C257S225000, C257S228000, C257S232000, C257S234000, C257S257000, C257S258000, C257S290000

Reexamination Certificate

active

11500212

ABSTRACT:
A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical transfer register is provided for each of columns of the light receiving portions. The first and third transfer electrodes of the first layer are alternately arranged in a charge transfer direction, and the adjacent two of the first and third transfer electrodes extend in parallel to each other between the light receiving portions. With this solid-state image pickup device, the accumulated charge capacity of each transfer region composed of the adjacent transfer electrodes for two-phases is equalized and the area of the light receiving portion is increased irrespective of variations in processed dimension between the transfer electrodes.

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