Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2010-04-19
2011-12-27
Pert, Evan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S227000, C257S228000, C257S292000, C257SE31053, C348S294000
Reexamination Certificate
active
08084837
ABSTRACT:
In a rear surface incidence type CMOS image sensor having a wiring layer720on a first surface (front surface) of an epitaxial substrate710in which a photodiode, a reading circuit (an n-type region750and an n+ type region760) and the like are disposed, and a light receiving plane in a second surface (rear surface), the photodiode and a P-type well region740on the periphery of the photodiode are disposed in a layer structure that does not reach the rear surface (light receiving surface) of the substrate, and an electric field is formed within the substrate710to properly lead electrons entering from the rear surface (light receiving surface) of the substrate to the photodiode. The electric field is realized by providing a concentration gradient in a direction of depth of the epitaxial substrate710. Alternatively, the electric field can be realized by providing a rear-surface electrode810or840for sending a current.
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Pert Evan
Rader & Fishman & Grauer, PLLC
Rodela Eduardo A
Sony Corporation
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