Solid-state image pickup device

Details Solid-state image pickup device Solid-state image pickup device

2007-08-14

2007-08-14

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S462000, C257S465000, C257SE31089

Reexamination Certificate

active

11015140

ABSTRACT:
A solid-state image pickup device10has an arrangement in which a second conductivity type semiconductor region14is formed on the surface of a first conductivity type electric charge accumulation region13of a light-receiving sensor portion, a shallow trench isolation layer20formed of an insulating layer is buried into a trench formed on a semiconductor substrate11, the shallow trench isolation layer20is composed of an upper wide portion21and a lower narrow portion22and a second conductivity type semiconductor region23is formed around the lower narrow portion22of the shallow trench isolation layer20. The solid-state image pickup device can suppress the occurrence of a dark current and a white spot, it can produce an image with high image quality and it can sufficiently maintain a sufficiently large amount of electric charges that can be handled by the light-receiving sensor portion.

REFERENCES:
patent: 6583484 (2003-06-01), Pan et al.
patent: 6885047 (2005-04-01), Shinohara et al.

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