Solid state image pickup device

Details Solid state image pickup device Solid state image pickup device

2007-07-17

2007-07-17

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S187000, C257S222000, C257S231000, C257S258000, C257S292000, C257S462000

Reexamination Certificate

active

10848359

ABSTRACT:
A solid state image pickup device comprising: a semiconductor substrate having a surface layer; charge storage regions disposed in the surface layer; vertical channels disposed in the surface layer adjacent to respective columns of the charge storage regions; vertical transfer electrodes formed above the semiconductor substrate, crossing the vertical channels; a horizontal channel disposed in the surface layer coupled to the vertical channels, having a first portion with transfer stages, each including a barrier region and a well region, and a second portion constituting a gate region with gradually decreasing width, and including an upstream region and a downstream region of different effective impurity concentration, establishing a built-in potential; horizontal transfer electrodes disposed above respective transfer stages of the horizontal channel; an output gate electrode disposed above the gate region; a floating diffusion region disposed in the surface layer coupled to the gate region of the horizontal channel.

REFERENCES:
patent: 5438211 (1995-08-01), Nakamura et al.
patent: 6833870 (2004-12-01), Nishi
patent: 2002/0027189 (2002-03-01), Murakami et al.
patent: 10-335635 (1998-12-01), None

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