Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-05-10
2011-05-10
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE27133
Reexamination Certificate
active
07939825
ABSTRACT:
A solid-state image pickup device1includes a semiconductor substrate10, light receiving unit14and light shielding film20. The solid-state image pickup device1is back surface incident type and photoelectrically converts light indent on the back surface S2of the semiconductor substrate10from an object into electrical charges and receives electrical charges produced by photoelectric conversion at the light receiving unit14to image the object. The light receiving unit14forms a PN junction diode with the semiconductor substrate10. The light shielding film20is provided over a front surface S1of the semiconductor substrate10so as to cover the light receiving unit14. The light shielding film20serves to shield light incident on the front surface S1from the outside of the solid-state image pickup device1.
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Anya Igwe U
Bryant Kiesha R
Renesas Electronics Corporation
Young & Thompson
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