Solid state image pickup device

Details Solid state image pickup device Solid state image pickup device

2011-08-23

2011-08-23

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S223000, C257S229000, C257S291000, C257S443000

Reexamination Certificate

active

08004019

ABSTRACT:
P type semiconductor well regions8and9for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region8at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer1A, for limiting a dark current generated at the end portion of the LOCOS layer1A. In addition, the second P type semiconductor well region9at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

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