Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1993-04-28
1994-03-29
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257258, 257261, 257263, 257265, 257443, 257445, H01L 2980, H01L 2714
Patent
active
052987787
ABSTRACT:
An application-type solid state imaging device which includes a plurality of picture elements arranged in a two-dimensional matrix. A sensor region is surrounded by a substrate and a gate region is positioned laterally substantially about the sensor region. A source region is formed through one surface of the substrate and aligned vertically with the sensor region, while a drain is formed at an opposing surface of the substrate and is likewise aligned with the sensor region. The sensor region and the gate region together define a channel through which source-drain current flows. Light incident on the substrate passes therethrough to the sensor region where charge accumulates photoelectrically for producing an image signal by controlling the source-drain current in proportion to the magnitude of the photoelectrically accumulated charge. The device is reset after reading by removing charge accumulated in the sensor region through the gate region.
REFERENCES:
patent: 3964083 (1976-06-01), Lohstroh
patent: 4216490 (1980-08-01), Ohki
patent: 4641167 (1987-02-01), Nishizawa
patent: 4651180 (1987-03-01), Nishizawa et al.
Frommer William S.
Prenty Mark V.
Sinderbrand Alvin
Sony Corporation
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