Solid-state image pick-up unit and method of manufacturing...

Details Solid-state image pick-up unit and method of manufacturing... Solid-state image pick-up unit and method of manufacturing...

2008-06-03

2008-06-03

Harvey, Minsun Oh (Department: 2828)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257SE27152, C257S222000, C257S225000, C438S060000, C438S075000, C438S144000

Reexamination Certificate

active

07382003

ABSTRACT:
A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, wherein the electric charge transfer portion comprises: an electric charge transfer electrode including a first layer electrode and a second layer electrode; and a gate oxide film, the gate oxide film comprises a second gate oxide film formed under the second layer electrode, the second gate oxide film comprising an ONO film which comprises a SiO film, a SiN film and a SiO film in this order, and the second gate oxide film is continuously formed to cover whole of a region between the first layer electrode and the second layer electrode and a region under the second layer electrode.

REFERENCES:
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patent: 2003/0170928 (2003-09-01), Shimozono et al.
patent: 2003/0210580 (2003-11-01), Abe
patent: 2003-332556 (2003-11-01), None

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