Solid-state image pick-up device of photoelectric converting...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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Details

C257S291000, C257S444000, C257SE21617, C257SE27159, C257S293000

Reexamination Certificate

active

07345328

ABSTRACT:
A solid-state image pick-up device of a photoelectric converting film lamination type including a semiconductor substrate and at least three layers of photoelectric converting films each of which is interposed between a common electrode film and pixel electrode films. The pixel electrode films correspond to pixels respectively, and at least three layers of photoelectric converting films are laminated through insulating layers. The at least three layers of photoelectric converting films are above the semiconductor substrate. Sets of the pixel electrode films are provided on each of the at least three layers of photoelectric converting films, and electric charge storage portions formed on the semiconductor substrate are connected through sets of columnar contact electrodes. Resistance values of the sets of columnar contact electrodes are equal to each other.

REFERENCES:
patent: 6072555 (2000-06-01), Mizutome et al.
patent: 58-103165 (1983-06-01), None
patent: 2002-83946 (2002-03-01), None
patent: 3405099 (2003-07-01), None

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