Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-08-18
1993-03-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257240, 257245, 257225, H01L 2978, H01L 2714, H01L 3100
Patent
active
051967197
ABSTRACT:
A solid-state image pick-up device is fabricated on a p-type semiconductor substrate, and having a plurality of photo-electric converters respectively having n-type impurity regions and formed in a surface portion of the semiconductor substrate at spacings, a shift register having an n-type charge transfer region separated from the n-type impurity regions by respective channel forming regions, a thin insulating film covering the channel forming regions and outlet subregions of the n-type impurity regions, and a transfer gate electrode extending on the thin insulating film, wherein the transfer gate electrode is shaped in such a manner as to create an electric field over each outlet subregion and the associated channel forming region so that carriers are accelerated from each outlet subregion through the associated channel forming region to the shift register.
REFERENCES:
patent: 4987466 (1991-01-01), Shibata et al.
Hille Rolf
Limanek Robert
NEC Corporation
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