Solid-state image pick-up device and method for manufacturing th

Details Solid-state image pick-up device and method for manufacturing th Solid-state image pick-up device and method for manufacturing th

1996-05-29

1998-07-28

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257229, H01L 27148, H01L 29768

Patent

active

057866074

ABSTRACT:
A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provided. A first p-type well and a second p-type well are formed on an N (100) silicon substrate. A vertical CCD n.sup.+ layer is formed in the second p-type well 3. Then, impurity ions are implanted into a surface layer of the N (100) silicon substrate including an upper layer portion of the vertical CCD n.sup.+ layer to form a p.sup.- layer. An isolating portion for isolating photodiode portions from the vertical CCD n.sup.+ layer and a read control portion for controlling the read of charges from the photodiode n layer are simultaneously formed on a portion adjacent to the vertical CCD n.sup.+ layer.

REFERENCES:
patent: 4514894 (1985-05-01), Kawagoe

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