Solid-state image pick-up device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C252S400610, C252S400610, C252S400610, C252S400610, C252S400610, C252S400610, C252S400610

Reexamination Certificate

active

06891243

ABSTRACT:
In a solid-state image pick-up device comprising a plurality of light receiving sensor sections, a vertical transfer path12formed close to each of the light receiving sensor sections, and a channel stopper13provided between the adjacent vertical transfer paths12and formed by an insulating layer having a trench structure, a conductive substance15to which a predetermined voltage is applied is buried in the insulating layer14. The predetermined voltage is a negative voltage if a signal charge is an electron, and is a positive voltage if the signal charge is a hole. Alternatively, the predetermined voltage is a pulse having an opposite phase to that of a read pulse to be applied to a transfer electrode17of the vertical transfer path12.

REFERENCES:
patent: 4518978 (1985-05-01), Takeshita
patent: 4688098 (1987-08-01), Kon et al.
patent: 4740824 (1988-04-01), Yano et al.
patent: 5286988 (1994-02-01), Nishi
patent: 5744831 (1998-04-01), Tanaka
patent: 6635911 (2003-10-01), Maruyama
patent: 20010054723 (2001-12-01), Narui et al.
patent: 2002-57381 (2002-02-01), None

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