Solid state image device with gate electrodes having low resista

Details Solid state image device with gate electrodes having low resista Solid state image device with gate electrodes having low resista

1995-09-01

1997-04-15

Garber, Wendy

Television

Camera, system and detail

Solid-state image sensor

348311, 257232, H04N 5335

Patent

active

056214618

ABSTRACT:
A solid state image device including: a plurality of photoelectric converting elements arranged in a matrix pattern along a first and a second direction in a semiconductor substrate; a plurality of electric charge transfer regions for receiving electric charges from the photoelectric converting elements and for transferring the electric charges toward the first direction, the electric charge transfer regions being provided adjacent to the plurality of photoelectric converting elements in the semiconductor substrate and extending along the first direction; and a plurality of gate electrodes for applying a voltage to the electric charge transfer regions to transfer the electric charge from the photoelectric converting elements to the electric charge transfer regions, and to transfer the electric charges toward the first direction, each of the gate electrodes having a plurality of transfer electrode portions provided over the electric charge transfer regions and a plurality of clip electrode portions electrically connecting the plurality of the transfer electrode portions to each other along the second direction, the plurality of the clip electrode portions having a greater thickness than that of the plurality of the transfer electrode portions.

REFERENCES:
patent: 4845544 (1989-07-01), Shimizu
patent: 5028972 (1991-07-01), Watanabe et al.
patent: 5080933 (1992-01-01), Grupen-Shemansky et al.
patent: 5234780 (1993-08-01), Nitayama et al.
patent: 5239412 (1993-08-01), Naka et al.
patent: 5422285 (1995-06-01), Ishibe

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