Solid-state image converting device with dot-like layer

Details Solid-state image converting device with dot-like layer Solid-state image converting device with dot-like layer

1992-03-27

1993-07-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257447, 257 85, 257448, 25037009, 25037011, H01L 2714

Patent

active

052296261

ABSTRACT:
A solid-state image converting device comprises a transparent substrate, a transparent electrode formed on the transparent substrate, an EL layer, formed on the transparent electrode, emitting light by the application of an electric field, a dot-like low resistance layer formed on the EL layer, a photoconductive layer formed on the dot-like low resistance layer, and a back electrode formed on the photoconductive layer. A radiation image entered the transparent substrate or the back electrode is converted into a visible light image having high brightness on the back electrode or the transparent substrate.

REFERENCES:
patent: 3790867 (1974-02-01), Hayakawa
patent: 3902185 (1975-08-01), Hayakawa
patent: 4940901 (1990-07-01), Henry et al.
patent: 4948978 (1990-08-01), Guyot
patent: 4980553 (1990-12-01), Henry
patent: 5001532 (1991-03-01), Petroff
Uchida et al., "Design of a Mosaic BGO Detector System for Positron CT," IEEE Transactions on Nuclear Science, vol. NS-33, No. 1, Feb. 1986, pp. 1-4.

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