Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S072000, C257S098000, C257S059000, C257S291000, C257S292000, C438S070000, C438S144000
Reexamination Certificate
active
08004020
ABSTRACT:
A solid-state image capturing device includes a plurality of electrode pads for inputting and outputting a signal or voltage from and to the outside, a plurality of photoelectric conversion elements, a planarization film for planarizing the difference in the level on the surface above the plurality of photoelectric conversion elements, a microlens for focusing incident light on each of the plurality of photoelectric conversion elements, and a protection film provided above the microlens and the planarization film, the planarization film and the protection film above the plurality of electrode pads being removed as an opening, where the protection film has a protection film removing area that at least includes an area removed across all or a corner portion of the opening and the image capturing area.
REFERENCES:
patent: 5747790 (1998-05-01), Shimomura et al.
patent: 6656762 (2003-12-01), Kim
patent: 2003/0197210 (2003-10-01), Uchida
patent: 2006/0023313 (2006-02-01), Kim
patent: 2006/0145217 (2006-07-01), Sohn
patent: 04-223371 (1992-08-01), None
patent: 2006-351761 (2006-12-01), None
Chiu Tsz K
Conlin David G.
Edwards Angell Palmer & & Dodge LLP
Sharp Kabushiki Kaisha
Smith Zandra
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