Solid-state image capturing device and imaging apparatus...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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Reexamination Certificate

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07372496

ABSTRACT:
An n-type semiconductor substrate11has a p-type well12in which are formed a charge transfer channel13, a flowing diffusion region14made of an n-type impurity region, an n-type buried region16and a reset drain region15. Transfer gates51and52of a horizontal CCD and an output gate41are formed on the surface of the charge transfer channel13, with an insulation film20interposed; reset electrodes31and32are formed on the surface of the buried region16, again with the insulation film20interposed. The floating diffusion region14is connected to a source follower circuit6. The reset electrodes31and32are provided adjacent to each other in the channel direction of a reset gate section3and can be driven independently of each other.

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