Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-04-03
2010-10-26
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S069000, C257SE21001, C257SE23001
Reexamination Certificate
active
07821090
ABSTRACT:
An image capturing apparatus has a plurality of solid-state image capturing devices each having light receiving sections laminated in a depth direction of a semiconductor substrate. The devices are sequentially arranged in a direction along a substrate surface. Incident light waves having wavelength bands corresponding to depths of respective light receiving sections are detected there and generate signal charges. Bands are associated with light receiving sections by the wavelength dependence of the optical absorption. Trench sections each reach from a light incident surface or an opposite substrate surface to respective light receiving sections that do not overlap each other in a plane view. Electric charge transfer sections transfer electric charges independently from the light receiving sections via side wall portions of their respective trenches to the light incident surface side or the opposite substrate surface side at the time of driving readout gate electrodes at each trench section.
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Conlin David G.
Edwards Angell Palmer & & Dodge LLP
Le Thao X
Manus Peter J.
Sharp Kabushiki Kaisha
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