Solid-state hybrid infrared imaging device

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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257226, H01L 2978, H01L 2714, H01L 3100

Patent

active

051683385

ABSTRACT:
A solid-state imaging device includes a photodiode array having a plurality of pixels, each pixel including a second conductivity type region formed in a first conductivity type semiconductor layer, an electrode common to all the pixels and disposed on the first conductivity type semiconductor layer, a signal transfer part for transferring signal charges generated in the pixels and a DC voltage source for applying a DC voltage in a forward direction to the pixels. The reverse bias voltage applied to a photodiode due to the voltage applied by the signal input stage of the signal transfer part is canceled by the forward DC voltage applied to the common electrode. As a result, the operating points of the pixels are uniform when nearly zero bias voltage is applied to the pixels.

REFERENCES:
patent: 3808435 (1974-04-01), Bate et al.
patent: 4614960 (1986-09-01), Bluzer
patent: 4994876 (1991-02-01), Hsia
"The Basis of the Solid-State Imaging Device" Jun. 10, 1982, p. 88.

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