Solid-state heterojunction electron beam generator

Electric lamp and discharge devices – With temperature modifier – For lead-in-seal or stem protection

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357034, 357056, 357055, 357052, 313346R, 313446, H01L 29161

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active

050310151

ABSTRACT:
A solid-state electron beam generator has a hetero bipolar structure comprising an emitter region having a first band gap, a base region having a second band gap narrower than the first band gap, and a collector region having an electron-emitting surface. Electrons are injected from the emitter region into the base region while a backward bias voltage being applied between the base region and the collector region. In consequence, electrons are emitted from the electron-emitting surface of the collector region. The emitter region is constituted by an N-type Al.sub.x Ga.sub.1-x) As layer (0<x.ltoreq.1) having the first band gap and formed on an n-type or n.sup.+ -type GaAs substrate or a semi-insulating GaAs substrate, the base region is constituted by a P-type Al.sub.z Ga.sub.(1-z) As layer (0.ltoreq.z<x) having the second band gap, and the collector region is constituted by an n-type Al.sub.t Ga.sub.(1-t) As layer (0.ltoreq.t.ltoreq.1) formed on the n-type or n.sup.+ -type GaAs substrate or a semi-insulating GaAs substrate.

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