Solid state force transducer

Details Solid state force transducer Solid state force transducer

1977-02-22

1978-11-28

Albritton, C. L.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

73727, 338 42, 357 26, 357 67, G01L 122

Patent

active

041278402

ABSTRACT:
The limited temperature range for operation of conventional semiconductive force transducers is greatly extended in both directions, typically attaining a range from about 4.degree. Kelvin to at least about 400.degree. C. A piezoresistive strain gage is typically formed in a monocrystalline layer of semiconductive material grown epitaxially to a thickness of only a few microns on a monocrystalline support member which has high inherent resistivity and serves directly as force responsive member. For example, silicon is grown epitaxially on one face of a sapphire pressure responsive diaphragm with suitably oriented crystal axes. The diaphragm is typically mounted in hermetically sealed relation on an alumina support with an interlayer of fused glass having selected properties. Transition from the alumina support to a conventional housing is preferably made via a metal such as Kovar in described configuration. Electrical connections to the silicon capable of withstanding high temperatures are preferably made via platinum with a shield of silicon/platinum alloy.

REFERENCES:
patent: 3274670 (1966-09-01), Lepselter
patent: 3739315 (1973-06-01), Kurtz et al.
patent: 3916365 (1975-10-01), Giachino

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