Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-03-22
2008-09-30
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S079000, C257S222000, C257S225000, C257SE27001, C438S024000, C438S026000, C438S028000
Reexamination Certificate
active
07429750
ABSTRACT:
A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light discharge surface through which light emitted from the first layer is externally discharged, the light discharge surface being located on the side of the substrate; and an electrode having a plurality of regions that are of a conductive material and are in ohmic-contact with the second layer.
REFERENCES:
patent: 2004/0217369 (2004-11-01), Nitta et al.
patent: 11-150297 (1999-06-01), None
patent: 2004-179365 (2004-06-01), None
Suehiro Yoshinobu
Yamaguchi Seiji
Lee Hsien-ming
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
LandOfFree
Solid-state element and solid-state element device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid-state element and solid-state element device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state element and solid-state element device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3984452