Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-10-19
1993-08-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257291, 257448, 257444, 257292, H01L 2714
Patent
active
052351955
ABSTRACT:
The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a substrate to form an array. A planarization layer is deposited over the array of transistors. An energy sensitive layer is deposited onto the planarization layer. Means is provided for electrically connecting the energy sensitive layer with each transistor of the array. A top electrode layer is deposited onto the energy sensitive layer. The solid state detector also comprises circuitry means for providing electronic read-out from each FET of the array.
REFERENCES:
patent: 3539803 (1970-11-01), Beerman
patent: 3809920 (1974-05-01), Cohen et al.
patent: 3846820 (1974-11-01), Lampe
patent: 3906544 (1975-09-01), Engeler et al.
patent: 3916268 (1975-10-01), Engeler et al.
patent: 3973146 (1976-08-01), Arnold et al.
patent: 4024560 (1977-05-01), Miller et al.
patent: 4258259 (1981-03-01), Obara et al.
patent: 4517733 (1985-05-01), Hamano
patent: 4606871 (1986-08-01), Krueger et al.
patent: 4608749 (1986-09-01), Harada et al.
patent: 4615848 (1986-10-01), Krueger et al.
patent: 4626687 (1986-12-01), Nara et al.
patent: 4670765 (1987-06-01), Nakamura et al.
patent: 4672454 (1987-06-01), Cannella et al.
patent: 4675739 (1987-06-01), Catchpole et al.
patent: 4689487 (1987-08-01), Nishiki et al.
patent: 4694317 (1987-09-01), Higasashi et al.
patent: 4735908 (1988-04-01), Higishi et al.
patent: 4739384 (1988-04-01), Higashi et al.
patent: 4740824 (1988-04-01), Yano et al.
patent: 4810881 (1989-03-01), Berger et al.
patent: 4820586 (1989-04-01), Krueger et al.
patent: 4826777 (1989-05-01), Ondris
patent: 5130259 (1992-07-01), Bahraman
Sherr, "Matrix and Alphanumeric Devices", Electronic Displays, pp. 182-319 (1979), Wiley & Sons, N.Y.
Hamano et al., "An Amorphous Si High Speed Linear Image Sensor", Proceedings of the 13th Conference on Solid State Devices, Tokyo, 1981; Japanese Journal of Applied Physics, vol. 21 (1982) Supplement 21-1, pp. 245-249.
McGill et al., "Amorphous-Silicon Alloy Contact-Type Image Sensors", SID International Symposium, Digest of Technical Papers, First Edition, (May 1989), pp. 251-261.
Tsunemi et al., "Application of a Frame Transfer-Type CCD as an X-Ray Image Sensor", Japanese Journal of Applied Physics, vol. 27, No. 12, Dec. 1988, pp. 2404-2408.
Proceedings of Electronic Imaging West, Pasadena, Calif., pp. 210-213 (Feb. 25-28, 1990), Biac, "A Wide Field of View IR CCD Camera".
Loeding Neil W.
Nins, deceased David V.
Tran Nang T.
Griswold Gary L.
Kagan David B.
Kirn Walter N.
Minnesota Mining and Manufacturing Company
Mintel William
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