Solid-state devices with radial dopant valence profile

Details Solid-state devices with radial dopant valence profile Solid-state devices with radial dopant valence profile

2006-02-07

2006-02-07

Harvey, Minsun O. (Department: 2828)

Coherent light generators

Particular beam control device

Q-switch

C372S041000

Reexamination Certificate

active

06996137

ABSTRACT:
A solid state, laser light control device (20, 30) and material (10), and methods of producing same. The device (20, 30) and material (10) consist essentially of a host material (14) which contains: a dopant species (16) at a first valence state (a), the concentration of which increases with distance from the surface (18); and the same dopant species (16) at a second valence state (b), the concentration which decreases with distance from the surface (18). The method comprises the steps of: obtaining a doped solid state material (14); exposing the solid state material (14) to elevated temperature, for a period of time, in an oxidizing or reducing atmosphere. The elevated temperature and time of exposure are selected to change the valence state (a) of the dopant (16) in direct proportion to distance from the surface (18) of the solid state material (16). What is thereby produced is a solid state device (20, 30) in which the concentration of the dopant16at the second valence state (b) decreases with radius, the concentration of the dopant (16) at the first valence state (a) increases with radius, and the sum of these concentrations remains constant.

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