Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1977-05-10
1979-04-03
Willis, Davis L.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
G01T 122
Patent
active
041479335
ABSTRACT:
A semiconductor body contains microscopic passages in which multiplication of the free electrons appearing at the entrances to said passages, under the effect of the incident (arrow) ionizing radiation, takes place. In the drawing, the reference 2 signifies the conductive film forming a surface barrier in conjunction with the semiconductor body which is endowed with the property of secondary emission with an emission coefficient better than unity; V.sub.o signifies the voltage applied to the terminals of said barrier; 5 and 6 designate the electron collector.
REFERENCES:
patent: 3691382 (1972-09-01), Somer
patent: 3890506 (1975-06-01), Berninger
patent: 3989946 (1976-11-01), Chapman et al.
Rougeot Henri
Roziere Guy
"Thomson-CSF"
Plottel Roland
Willis Davis L.
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