Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-12-27
2005-12-27
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S622000, C257S653000
Reexamination Certificate
active
06979877
ABSTRACT:
A method of making dielectrically isolated solid state device comprising state device (including integrated circuits) comprises providing a silicon wafer having a PN junction or other electronic rectifying barrier contained therein and thermally growing or ion-implanting selected ions to an oxide or nitride isolating groove in-situ to isolate it into a plurality of physically integral pockets for use as electrically separately operable components. The groove has a symmetrical, centrally rounded bottom which is located within a few microns below the PN junction or rectifying barrier. Through the unique oxide
itride forming conditions and through curvature, symmetry, and proximity effects, novel passivation and isolation results obtain.
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