Oscillators – Molecular or particle resonant type
Patent
1980-06-25
1983-03-15
Grimm, Siegfried H.
Oscillators
Molecular or particle resonant type
331107R, H01S 102
Patent
active
043769179
ABSTRACT:
A solid-state cyclotron maser for generating low power (1 watt or less) signals in the submillimeter frequency range (300 GHz-30,000 GHz) includes an accelerating region, a drift region, and a metal grid therebetween. Both regions are formed from semiconductor material, such as indium antimonide, having non-parabolic energy bands. The drift region is a thin disc having metallized outer surfaces, but includes an annular opening in the metal on the front side and a circular opening in the metal on the back side, and is grounded. A grid of metal rings is placed on the annular opening of the drift region. The accelerating region is a hollow cylinder having a metallized front surface. It couples to the drift region for covering the annular opening and the grid. A negative bias voltage is applied to the accelerating region and a magnetic field is applied to the maser at an angle to the axis of the maser. Electrons propagate in spiral trajectories through the accelerating region, grid and drift region. Movement of electrons within the non-parabolic energy bands of the semiconductor material causes changes in the effective mass of the electrons. Phase-bunching of electrons occurs and electrons radiate coherently. Energy is removed from the drift region at the opening on its back side.
REFERENCES:
patent: 3533011 (1970-10-01), Feinstein et al.
patent: 3617911 (1971-11-01), Copeland
Ganguly et al., "Theory of a Solid-State Cyclotron Maser", Physical Review , vol. 18, No. 12, Dec. 15, 1978, pp. 6880-6889.
Kataoka et al., "Angular Dependence of Microwave Emission from InSb on the Magnetic Field", Proceedings of IEEE, Jun. 1967, pp. 1080-1081.
Tacano et al., "Continuous Coherent Microwave Oscillation from n InSb", Journal of Applied Physics, vol. 42, Sep. 1971, pp. 4006-4014.
Van Nieuwland et al., "Cyclotron Waves in InSb", IEEE Transactions on Electron Devices, vol. Ed-14, Sep. 1967, pp. 596-599.
Chu Kwo R.
Davis Kenneth L.
Ganguly Achintya K.
Beers Robert F.
Ellis William T.
Grimm Siegfried H.
Ranucci Vincent J.
The United States of America as represented by the Secretary of
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