Solid-state charge-coupled-device imager

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257229, 257250, H01L 2978, H01L 2714, H01L 3100

Patent

active

052371913

ABSTRACT:
A solid-state charge-coupled-device imager has an imaging region composed of a matrix of vertically and horizontally arrayed photosensitive areas for storing signal charges depending on the intensity of applied light, and a plurality of vertical shift resisters for vertically transferring the signal charges shifted from the photosensitive areas. The signal charges from the vertical shift registers are shifted to a horizontal shift register that transfers the signal charges in a horizontal direction. The horizontal shift register comprises a plurality of charge transfer electrodes horizontally spaced at predetermined intervals. The charge transfer electrodes are inclined to the horizontal direction. The charge transfer electrodes may be inclined linearly in their entirety to the horizontal direction or may be of a chevron shape.

REFERENCES:
patent: 4364164 (1982-12-01), Bluzer et al.
patent: 4589005 (1986-05-01), Matsuda et al.
patent: 5040071 (1991-08-01), Stevens

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