Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-11-04
1993-08-17
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 257250, H01L 2978, H01L 2714, H01L 3100
Patent
active
052371913
ABSTRACT:
A solid-state charge-coupled-device imager has an imaging region composed of a matrix of vertically and horizontally arrayed photosensitive areas for storing signal charges depending on the intensity of applied light, and a plurality of vertical shift resisters for vertically transferring the signal charges shifted from the photosensitive areas. The signal charges from the vertical shift registers are shifted to a horizontal shift register that transfers the signal charges in a horizontal direction. The horizontal shift register comprises a plurality of charge transfer electrodes horizontally spaced at predetermined intervals. The charge transfer electrodes are inclined to the horizontal direction. The charge transfer electrodes may be inclined linearly in their entirety to the horizontal direction or may be of a chevron shape.
REFERENCES:
patent: 4364164 (1982-12-01), Bluzer et al.
patent: 4589005 (1986-05-01), Matsuda et al.
patent: 5040071 (1991-08-01), Stevens
Tsukigi Kazunori
Yonemoto Kazuya
James Andrew J.
Ngo Ngan Van
Sony Corporation
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