Solid-state camera employing non-volatile charge storage element

Communications: electrical – Digital comparator systems

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Details

250200, 357 30, 358213, G11C 1142, H01L 2978

Patent

active

040259102

ABSTRACT:
A non-volatile charge storage element wherein long-term charge storage occurs in the interface states of the element. Charge is stored at low applied voltages (.ltoreq. 10 volts) in short times (.ltoreq. 1 microseconds) and is stored as long as 10.sup.5 seconds or longer. The states are emptied by exposure to radiation in the visible or the near infrared regions of the spectrum. There are described, also, an information storage device employing a plurality of such elements and a solid-stage camera wherein the image screen includes a plurality of such elements. Changes in the charge storage in each of the elements results in changes in the capacitance of the element; either the capacitance of the element or its charge state is sensed to indicate the state of the element for information storage purposes. In one embodiment, thin film techniques are employed and a change in transconductance is detected to sense the charge state.

REFERENCES:
patent: 3683193 (1972-08-01), Weimer
patent: 3746867 (1973-07-01), Phelan et al.
patent: 3786441 (1974-01-01), Engeler et al.
patent: 3869572 (1975-03-01), Carter
B309,755, Jan. 1975, Weimer, 178/7.1.

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