Solid state amplifier device and circuit therefor

Details Solid state amplifier device and circuit therefor Solid state amplifier device and circuit therefor

1976-03-05

1977-03-29

Lynch, Michael J.

357 16, 357 34, H01L 4500

Patent

active

040152820

ABSTRACT:
A solid state amplifier device which comprises contiguous layers of material forming emitter, base, and collector electrodes, preferably, the emitter electrode-forming layer being made of a semiconductor switch material which, when a voltage above a given threshold voltage is applied to opposite sides thereof, switches from a relatively non-conductive to a relatively operative conductive state. In one form of the invention providing maximum amplification, the collector electrode and base electrode-forming layers are made of extrinsic semiconductor materials of opposite conductivity type and, in its conductive state, the switch material of the emitter-forming layer is of the same conductivity type as the collector electrode-forming layer to form a transistor-like device. In another form of the invention, to provide a radiation hard amplifier device, the base electrode and collector electrode-forming layers are also made of a semiconductor switch material of the type described.

REFERENCES:
patent: 3656032 (1972-04-01), Henisch
patent: 3748501 (1973-07-01), Fritzsche et al.
patent: 3761896 (1973-09-01), Davidson
C. Sie, "Memory Cell Using Bistable Resistivity in Amorphous Aa-Te-Ge Film", Thesis at Iowa State University Engineering Research Institute, May, 1969, pp. 1-42.
R. Shaw et al., "New Thin-film Tunnel Triode Using Amorphous Semiconductors", Appl. Phys. Lett., vol. 20 No. 7, Apr. 1972, pp. 241-243.

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