Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1980-05-01
1982-03-16
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330296, H03F 360
Patent
active
043203531
ABSTRACT:
An improved bias circuit of the quarter-wavelength microstrip line type for a high-frequency amplifier is provided which is of divided form, including two, open and short stubs the sum of whose lengths in effect amounts to a quarter wavelength. The characteristic impedance of such microstrip line can be effectively increased by properly selecting the ratio of the stub lengths, thus enabling realization of a wider-band high-frequency amplifier circuit with reduced cost.
REFERENCES:
patent: 3869678 (1975-03-01), Mahoney
Ho et al., "Design of a 2 GHz, 50 Watt Power Amplifier Using Three-Way Combiners", May 16-18, 1977, 27th Electronic Components Conference.
Mullins James B.
Nippon Electric Co. Ltd.
Wan Gene
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