Solid-solution semiconductor laser element material and laser el

Details Solid-solution semiconductor laser element material and laser el Solid-solution semiconductor laser element material and laser el

1992-09-24

1994-06-21

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053234103

ABSTRACT:
The present invention relates to a solid solution semiconductor laser element material which can be used for a laser element which oscillates within an inflated region of wavelength range of 0.4-8 .mu.m, can vary wavelength and can be operable in the vicinity of room temperature. The present invention more particularly relates to a material which can be used for a laser element having a lattice matching type double hetero-structure or lattice matching type quantum well structure.

REFERENCES:
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Semiconductor Science and Technology, vol. 5, No. 3-S, Mar. 1990, London pp. S12-S20, H. Preier "Physics and applications of IV-VI compound semiconductor lasers".
Proceedings of the Symposium of the Materials Research Society (vol. 90)-Materials for IR Detectors and Sources, 1-5 Dec., 1986, Boston, Mass., US, pp. 47-59, Dale L. Partin, "Preparation and applications of lead chalcogenide diode lasers".
Applied Physics Letters, vol. 58, No. 8, 25 Feb. 1991, New York, US, pp. 799-800, N. Koguchi et al., "Double-heterostructure Pb1-x-yCdxSryS/PbS/Pb1-x-yCdxSryS lasers grown by molecular beam epitaxy".
Japanese Journal of Applied Physics, vol. 28, No. 7, Jul. 1989, Tokyo, JP, pp. 1170-1173, Noboyuki Koguchi et al. "New quaternary semiconductor material Pb1-xCdxS1-ySey for lattice-matched heterostructure lasers with emission wavelength around 3 mum".
Journal of Vacuum Science and Technology: Part B, vol. 4, No. 2, Mar. 1986, New York, US, pp. 578-580, D. L. Partin et al., "Lead calcium telluride grown by molecular beam epitaxy".
Journal of Crystal Growth 81 (1987) 400-404, North-Holland, Amsterdam, "Double Heterostructure Pb.sub.1-x Cd.sub.x S.sub.1-y Se.sub.y /PbS/Pb.sub.1-x Cd.sub.x S.sub.1-y Se.sub.y Lasers Grown By Molecular Beam Epitaxy", N. Koguchi, T. Kiyosawa and S. Takahashi no month available.
Superlattices and Microstructures, vol. 1, No. 2, 1985, "Lead Salt Quantum Well Diode Lasers", Dale L. Partin, pp. 131-135 no month available.
Appl. Phys. Lett. 55(5), 31 Jul. 1989, .RTM.1989 American Institute of Physics "Pb.sub.1-x Sr.sub.x S/PbS double-heterostructure lasers prepared by hot-wall expitaxy", A. Ishida, K. Muramatsu, H. Takashiba and M. Fujiyasu, pp. 430-431.
Appl. Phys. Lett. 53(26), 26 Dec. 1988, .RTM.1988 American Institute of Physics "Near-room-temperature operation of Pb.sub.1-x Sr.sub.x Se infrared diode lasers using molecular beam epitaxy growth technique", Beate Spanger, U. Schiessl, A. Lambrcht, H. Bottner, and M. Tacke, pp. 2582-2583.

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