Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1998-01-23
2000-02-15
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257113, 257116, 257459, H01L 3112, H01L 3116
Patent
active
060256109
ABSTRACT:
A solid relay having a light emitter and a photodetector and a method of producing the same are disclosed. A planer thyristor, photodiode, phototransistor or similar photodetector is formed on an Si substrate or wafer. The surface of the photodetector is covered with an SiO.sub.2, PSG (Phospher-Silicate Glass) or similar transparent insulation film. An ITO (Indium Tin Oxide) or similar transparent film, an organic thin film and a metal electrode are sequentially formed on the transparent insulation film, constituting a light emitter. The laminate is separated from the wafer in the form of a chip by dicing. The chip is bonded to a lead frame, connected to the leads of a lead frame by wire bonding, and then sealed with epoxy resin or similar resin.
REFERENCES:
patent: 3096442 (1963-07-01), Stewart
patent: 4458408 (1984-07-01), Alonas et al.
patent: 4888625 (1989-12-01), Mueller
patent: 5589733 (1996-12-01), Noda et al.
Partial English translation of Office Action issued by Japanese Patent Office on Dec. 15, 1998.
Kusaka Teruo
Ooishi Mitsuma
Guay John
NEC Corporation
LandOfFree
Solid relay and method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid relay and method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid relay and method of producing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1907796