Solid relay and method of producing the same

Details Solid relay and method of producing the same Solid relay and method of producing the same

1998-01-23

2000-02-15

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257113, 257116, 257459, H01L 3112, H01L 3116

Patent

active

060256109

ABSTRACT:
A solid relay having a light emitter and a photodetector and a method of producing the same are disclosed. A planer thyristor, photodiode, phototransistor or similar photodetector is formed on an Si substrate or wafer. The surface of the photodetector is covered with an SiO.sub.2, PSG (Phospher-Silicate Glass) or similar transparent insulation film. An ITO (Indium Tin Oxide) or similar transparent film, an organic thin film and a metal electrode are sequentially formed on the transparent insulation film, constituting a light emitter. The laminate is separated from the wafer in the form of a chip by dicing. The chip is bonded to a lead frame, connected to the leads of a lead frame by wire bonding, and then sealed with epoxy resin or similar resin.

REFERENCES:
patent: 3096442 (1963-07-01), Stewart
patent: 4458408 (1984-07-01), Alonas et al.
patent: 4888625 (1989-12-01), Mueller
patent: 5589733 (1996-12-01), Noda et al.
Partial English translation of Office Action issued by Japanese Patent Office on Dec. 15, 1998.

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