Solid phase epitaxy and regrowth process with controlled defect

Details Solid phase epitaxy and regrowth process with controlled defect Solid phase epitaxy and regrowth process with controlled defect

1982-11-15

1985-04-09

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 29576T, 148187, 357 91, 427 531, H07L 21263, H07L 21225

Patent

active

045099901

ABSTRACT:
Disclosed is a method of fabricating a semiconductor on insulator composite substrate comprised of a semiconductor layer adjacent an insulator substrate, the defect density profile of the semiconductor layer being low and relatively uniform, a relatively thin region of the semiconductor layer at the semiconductor/insulator interface having a substantially greater defect density. The method comprises the steps of depositing the semiconductor layer adjacent the insulator substrate, amorphizing a buried portion of the semiconductor layer without damaging the insulator substrate such as to release contaminants into the semiconductor layer, recrystallizing the amorphous portion of the semiconductor or layer, removing a portion of the semiconductor layer so as to expose the recrystallized layer, and depositing an additional semiconductor layer on the recrystallized layer to provide an essentially defect free semiconductor layer of any desired thickness. The provision of semiconductor layers formed by either appropriately selecting the depth within the semiconductor layer at which the amorphization occurs and the width of the amorphized region or permitting self-annealing to occur during the amorphization, or both, having a desired high defect density and interposed between the recrystallized layer and the insulator substrate are also disclosed.

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