Solid material comprising a thin metal film on its surface...

Coating processes – Coating by vapor – gas – or smoke – Metal coating

Reexamination Certificate

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C427S253000, C427S255260, C427S255270

Reexamination Certificate

active

06958174

ABSTRACT:
The present invention provides a solid material comprising a solid substrate having a thin metal film and methods for producing the same. The method generally involves using a plurality self-limiting reactions to control the thickness of the metal film.

REFERENCES:
patent: 5175017 (1992-12-01), Kobayashi et al.
patent: 5306666 (1994-04-01), Izumi
patent: 5681775 (1997-10-01), Pogge
patent: 5916365 (1999-06-01), Sherman
patent: 6040010 (2000-03-01), Srinivasan et al.
patent: 6066366 (2000-05-01), Berenbaum et al.
patent: 6143659 (2000-11-01), Leem
patent: 6174809 (2001-01-01), Kang et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6440541 (2002-08-01), Humphrey et al.
patent: 6475276 (2002-11-01), Elers et al.
Bean, Heather; Deposition and Thin Film Properties of CVD Tungsten Films Using SiH4, H2, and Si Reduction of WF6, www.frii.com/˜bean/properties.htm, Nov. 6, 1998.
Tsai et al., Layer Tungsten and its Applications for VLSI Interconnects, International Electron Devices Meeting Technical Digest, Dec. 11-14, 1988.
Kumagai et al., Fabrication of Titanium Oxide Thin Films . . . , 1995, Thin Solid Films 263, pp. 47-53.
Ritala et al., Studies on the Morphology of Al2O3Thin Films . . . , 1996, Thin Solid Films 286, pp. 54-58.
Ritala et al., Growth of Titanium Dioxide Thin Films . . . , 1993, Thin Solid Films 225, pp. 288-295.
Han et al., A Near-Edge X-Ray Absorption Fine Structure Study of Atomic Layer Epitaxy . . . , 1998, Surface Science 415, pp. 251-263.
Morishita et al., Atomic-Layer Chemical-Vapor-Deposition of Silicon-Nitrate, 1997, Applied Surface Science 112, pp. 198-204.
Takahashi et al., Germanium Atomic Layer Epitaxy Controlled by Surface Chemical Reactions, Jun. 1989, Journal of Electrochem, Soc.-vol. 136-No. 6, pp. 1826-1827.
Gates et al., Epitalxial Si Films on Ge(100) Grown via H/CI Exchange, Feb. 1993, Applied Phys. Lett. 62 (5), pp. 510-512.
Ishii et al., Atomic Layer Epitaxy of AIP SNF its Application to . . . , 1997, Journal of Crystal Growth 180, pp. 15-21.
Juppo et al., Deposition of Copper Films by an Alternate Supply of CuCl and Zn, 1997, Journal of Vac. Sci. Technol. A 15(4), pp. 2330-2333.
Bell et al., Batch Reactor Kinetic Studies of Tungsten LPCVD . . . , Jan. 1996, Journal of Electrochem. Soc.-vol. 143-No. 1, pp. 296-302.
Martensson et al., Atomic Layer Epitaxy of Copper on Tantalum, 1997, Chem. Vap. Deposition-3-No. 1, pp. 1-6.
Kumagai et al., Titanium Oxide/Aluminum Oxide Multilayer Reflectors . . . , May 1997, Applied Phys. Lett. 70 (18), pp. 2338-2340.
Kobayashi et al., Is Situ Infrared Reflection and Transmission Absorbsion . . . , May 1993, Journal of Appl. Phys. 73 (9), pp. 4637-4643.
Kobayashi et al., Study on Mechanism of Selective Chemical Vapor Deposition . . . , Jan. 1991, Journal of appl. Phys. 69 (2), pp. 1013-1019.
Klaus et al., Atomic Layer Controlled Growth of SiO2Films . . . , Mar. 1997, Applied Phys. Lett. 70 (9), pp. 1092-1094.
Klaus et al., Al3O3Thin Film Growth on Si(100) Using Binary Reaction Sequence Chemistry, 1997, Thin Solid Films 292, pp. 135-144.
George et al., Surface Chemistry for Atomic Layer Growth, 1996, Journal of Phys. Chem 100, pp. 13121-13131.
Klaus et al., Atomic Layer Controlled Growth of Si3N4Films . . . , Surface Science 418, pp. L14-L19.

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