Solid imaging pick-up element

Details Solid imaging pick-up element Solid imaging pick-up element

1994-07-13

1995-08-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257229, 257294, 257432, H01L 2714, G02F 1015

Patent

active

054442770

ABSTRACT:
A solid image pick-up element has a pixel region, an output region located near the pixel region, and a field portion located remote from the pixel region, all of which are formed at un upper layer of a semiconductor substrate. The pixel region is provided with plural rows of light receiving portions for performing photoelectric conversion with respect to light received thereby. Between the plural rows of the light receiving portions are interposed transfer portions for transferring signals obtained through the photoelectric conversion. The output region is provided with an output portion for outputting the signals transferred from the transfer portions. The semiconductor substrate is covered with three dielectric films, and an opening is formed through two dielectric films at a location above the output portion.

REFERENCES:
patent: 4210922 (1980-07-01), Shannon
patent: 4464684 (1984-08-01), Esser et al.
patent: 4783691 (1980-11-01), Harada
patent: 5192990 (1993-03-01), Stevens
J. Hojo et al., IEEE Transactions on Electron Devices, 38:(5) 954-959 (May, 1991), "A 1/3-in 510(H).times.492(V) CCD Image Sensor with Mirror Image Function".

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