Solid film growth via preferential etching of liquid solutions

Details Solid film growth via preferential etching of liquid solutions Solid film growth via preferential etching of liquid solutions

1980-12-15

1983-11-15

Vertiz, O. R.

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

156624, 423 87, 423299, 423508, 423509, C01B 3302, C01B 1900, C01B 2508, C01G 3000

Patent

active

044155450

ABSTRACT:
A process for growing crystals of an inorganic material by forming a solution of the material in a solvent for the compound, forming a film of the solution and etching the solvent from the film with an etching gas until crystals of the material form. The solution has a solidification temperature lower than the melting or sublimation temperature of the material and higher than the condensation temperatures of the etching gas and of reaction products formed by the etching. The etching temperature is between the solidification temperature of the solution and the melting or sublimation temperature of the material and is lower than the vaporization temperature of the solvent and solution and higher than the condensation temperatures of the etching gas and reaction products.

REFERENCES:
patent: 2032785 (1936-03-01), Zorn et al.
patent: 3597171 (1971-08-01), Knippenberg et al.
patent: 4242175 (1980-12-01), Zumbrunnen
patent: 4288411 (1981-09-01), Holland et al.

Affiliated with

Also associated with

Rating

Solid film growth via preferential etching of liquid solutions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid film growth via preferential etching of liquid solutions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid film growth via preferential etching of liquid solutions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-159244