Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2008-02-12
2011-11-22
Ghyka, Alexander (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
Reexamination Certificate
active
08062385
ABSTRACT:
A method of forming a capacitor includes the steps of:forming an anode with an anode wire extending there from;forming a dielectric on the anode;forming a cathode layer on the dielectric;providing a substrate comprising at least one via and at least two connectors;inserting the anode wire into a first via;forming an electrical connection between the anode wire and a first connector of the connectors; andforming an electrical connection between the cathode layer and a second connector.
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Ghyka Alexander
Guy Joseph T.
Kemet Electronics Corporation
Nexsen Pruet , LLC
Nikmanesh Seahvosh
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