Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2006-11-21
2006-11-21
Ha, Nguyen T. (Department: 2831)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C029S025410, C029S025420, C361S523000, C361S525000, C361S528000, C361S529000
Reexamination Certificate
active
07138000
ABSTRACT:
A method is provided for making a solid electrolytic capacitor comprising a flattened porous body. According to this method, use is made of a pair of pressure blocks and a vertical movement block for engagement with the pair of pressure blocks. The pair of pressure blocks face each other and are horizontally movable. A space is formed between these two pressure blocks for loading powder made of a valve metal. The powder loaded in the space is compressed by the pair of pressure blocks to form a flattened porous body. The compression by the pair of pressure blocks is brought about by a downward motion of the vertical movement block held in engagement with the pair of pressure blocks.
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Ha Nguyen T.
Hamre Schumann Mueller & Larson P.C.
Rohm & Co., Ltd.
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