Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1998-06-09
2000-02-15
Dutton, Brian
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
B21F 4100
Patent
active
06024772&
ABSTRACT:
An oxide film 2 which is so modified as to hold hydrophobic groups 3 on its surface, and further to stabilize an anionic substance 6 among those hydrophobic groups, has an electroconductive polymer layer 7 formed thereupon. The method by which to adhere the hydrophobic groups 3 and anionic substance 6 onto the surface of the oxide film comprises exposing an element upon which the oxide film has been formed, to a steam of the hydrophobic group or to a solution containing the hydrophobic group, and then exposing the same element to a steam of the anionic substance or to a solution containing the anionic substance. This method allows a hydrophobic group and anionic substance to be applied thinly and evenly on the surface of an oxide film, regardless of the kind and nature of the hydrophobic group and anionic substance.
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patent: 5359204 (1994-10-01), Eguchi et al.
patent: 5424907 (1995-06-01), Kojima et al.
patent: 5586000 (1996-12-01), Sakata et al.
patent: 5729428 (1998-03-01), Sakata et al.
Nishiyama Toshihiko
Sakata Koji
Uchida Isamu
Dutton Brian
NEC Corporation
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