Solid diffusion sources for phosphorus doping containing silicon

Details Solid diffusion sources for phosphorus doping containing silicon Solid diffusion sources for phosphorus doping containing silicon

1974-08-26

1976-01-06

Padgett, Benjamin R.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

106 57, 106 69, 148189, 252518, H01B 106, C04B 3548, C04B 3502, H01L 736

Patent

active

039310566

ABSTRACT:
Solid diffusion sources for phosphorus doping comprise from 5 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. While such materials may be hot-pressed, it is preferred to cold-press and sinter to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O.sub.7 the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 4000 psi to about 20,000 psi pressure during cold-pressing, and from about 1080.degree.C to about 1190.degree.C firing temperature.

REFERENCES:
patent: 2794846 (1957-06-01), Fuller
patent: 3354005 (1967-11-01), Lepiane
patent: 3473980 (1969-10-01), Beadle
patent: 3514348 (1970-05-01), Ku
patent: 3540951 (1970-11-01), Pammer
patent: 3630793 (1971-12-01), Christensen
patent: 3849344 (1974-11-01), McMurtry
patent: 3852086 (1974-12-01), Murata

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