Solid diffusion dopants for semiconductors and method of making

Details Solid diffusion dopants for semiconductors and method of making Solid diffusion dopants for semiconductors and method of making

1976-07-29

1977-07-05

Ozaki, G.

Metal treatment

Compositions

148186, 148189, 252950, 252951, 106 69, 106 732, 106286, C04B 3540, H01L 21223

Patent

active

040337901

ABSTRACT:
Disclosed is a solid diffusion source for the phosphorus doping of semiconductors, which comprises a substance composed of at least one kind of compound R.sub.2 O.sub.3 selected from the group consisting of Y.sub.2 O.sub.3, La.sub.2 O.sub.3 and Ce.sub.2 O.sub.3 and P.sub.2 O.sub.5 and containing mainly a compound with a chemical formula R.sub.2 O.sub.3.5P.sub.2 O.sub.5.

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patent: 3907618 (1975-09-01), Rapp
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patent: 3972838 (1976-08-01), Yamashita et al.

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