1978-11-03
1979-10-16
Wojciechowicz, Edward J.
357 67, 357 68, 357 71, H01L 2990
Patent
active
041715284
ABSTRACT:
A solderable zener diode adapted for mounting in a package of the type wherein leads or electrodes must be soldered to the diode contact pads has a shallow junction region formed by a controlled diffusion of a first type of semiconductivity impurity into a semiconductive material having a second type of semiconductivity to establish a desired zener voltage. A region of deep diffusion of first type of semiconductivity impurity is formed about and in contact with the shallow junction region, and a metal contact is electrically connected to the deep diffused region about its entire periphery. The shallow junction region is overlayed with a layer of glass and sputtered quartz and a metal contact pad is formed over the entire diffused region of the zener diode including the shallow junction region and the deep diffused region using multiple layers of contact metal.
REFERENCES:
patent: 3534231 (1970-10-01), Biard
patent: 4030117 (1977-06-01), Kling
Goldman Stephen B.
International Telephone and Telegraph Corporation
O'Halloran John T.
Van Der Sluys Peter C.
Wojciechowicz Edward J.
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