Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2009-05-08
2010-11-23
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S779000
Reexamination Certificate
active
07839000
ABSTRACT:
An electronic device may include an electronic substrate, and an under bump seed metallurgy layer on the electronic substrate. A barrier layer may be provided on the under bump seed metallurgy layer so that the under bump seed metallurgy layer is between the barrier layer and the electronic substrate, and the barrier layer may include nickel and/or copper. Moreover, portions of the under bump seed metallurgy layer may be undercut relative to portions of the barrier layer. In addition, a solder layer may be provided on the barrier layer so that the barrier layer is between the solder layer and the under bump seed metallurgy layer.
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pa
Adema Gretchen
Bumgarner Susan
Chilukuri Pooja
Mis J. Daniel
Rinne Christine
Menz Douglas M
Myers Bigel Sibley & Sajovec P.A.
Unitive International Limited
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