Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-02-27
2010-02-09
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S779000, C257SE23015, C257SE23037
Reexamination Certificate
active
07659621
ABSTRACT:
Methods of forming a solder structure may include providing a wafer including a plurality of die therein, and a solder wettable pad may be formed on one of the die adjacent an edge of the die. The solder wettable pad may have a length parallel to the edge of the die and a width perpendicular to the edge of the die wherein the length parallel to the edge of the die is greater than the width perpendicular to the edge of the die. A solder bump may be plated on the solder wettable pad, and the die may be separated from the wafer along the edge of the die after plating the solder bump on the solder wettable pad. Moreover, the solder bump may be reflowed on the solder wettable pad so that the solder structure extends laterally from the solder wettable pad beyond the edge of the die after separating the die from the wafer. Related structures are also discussed.
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Myers Bigel Sibley & Sajovec P.A.
Quach Tuan N.
Unitive International Limited
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