Solder interconnection structure for joining semiconductor devic

Metal fusion bonding – Process – Critical work component – temperature – or pressure

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357 67, 357 68, 357 69, 357 72, 29590, 29840, 228175, 2281802, 361400, H01L 2350, H01L 2158, H05K 706, H05K 334

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046046445

ABSTRACT:
An improved solder interconnection for forming I/O connections between an integrated semiconductor device and a support substrate having a plurality of solder connections arranged in an area array joining a set of I/O's on a flat surface of the semiconductor device to a corresponding set of solder wettable pads on a substrate, the improvement being a band of dielectric organic material disposed between and bonded to the device and substrate embedding at least an outer row of solder connections leaving the center inner solder connections and the adjacent top and bottom surfaces free of dielectric material.

REFERENCES:
patent: 3871015 (1975-03-01), Lin et al.
patent: 4190855 (1980-02-01), Inoue
patent: 4238528 (1980-12-01), Angelo et al.
patent: 4545610 (1985-10-01), Lakritz et al.
Martin et al., IBM Technical Disclosure Bulletin vol. 23, No. 5, Oct. 1980, pp. 1877-1878.

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