Solder bump UBM structure

Details Solder bump UBM structure Solder bump UBM structure

2011-03-29

2011-03-29

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S781000, C257S782000

Reexamination Certificate

active

07915741

ABSTRACT:
Disclosed is an under bump metallization structure including a plurality of metal or metal alloy layers formed on chip bond pads. The disclosed UBM structure has a stress improvement on the semiconductor device because the thickness of the copper-base layer is reduced to between about 0.3 and 10 microns, preferably between about 0.3 and 2 micron. The presence of the pure tin layer prevents oxidation and contamination of the nickel-base layer. It also forms a good solderable surface for the subsequent processes. Also disclosed are semiconductor devices having the disclosed UBM structure and the methods of making the semiconductor devices.

REFERENCES:
patent: 6413851 (2002-07-01), Chow et al.
patent: 6501185 (2002-12-01), Chow et al.
patent: 6638847 (2003-10-01), Cheung et al.
patent: 6716738 (2004-04-01), Kim et al.
patent: 6878465 (2005-04-01), Moon et al.
patent: 7119002 (2006-10-01), Lin
patent: 2004/0217482 (2004-11-01), Wang et al.
patent: 2005/0012211 (2005-01-01), Kung et al.

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