Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2011-07-05
2011-07-05
Wagner, Jenny L. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257SE23021
Reexamination Certificate
active
07973418
ABSTRACT:
An apparatus and method for a semiconductor package including a bump on input-output (IO) structure are disclosed involving a device pad, an under bump metal pad (UBM), a polymer, and a passivation layer. The shortest distance from the center of the device pad to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.5:1 to 0.95:1. Also, the shortest distance from the center of the polymer to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.35:1 to 0.85:1. Additionally, the shortest distance from the center of the passivation layer to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.35:1 to 0.80:1.
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Alvarado Reynante
Lu Yuan
Redburn Richard
Flipchip International, LLC
Greenberg & Traurig, LLP
Wagner Jenny L.
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