Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-11-13
2007-11-13
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S734000, C257S779000, C257SE21508, C257SE23021
Reexamination Certificate
active
10750059
ABSTRACT:
An interconnect structure a substrate, a contact pad disposed over a surface of the substrate, and an insulative mask disposed over the contact pad. The insulative mask can include an opening that is aligned over and exposes an inner portion of the contact pad. The inner portion of the contact pad includes a compliant layer and a conductive layer that is disposed over the compliant layer. The inner portion of the contact pad has sufficient flexibility to distribute mechanical stress applied to the contact pad and can mitigate damage to the interconnect structure.
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Le Thao X.
Tung Yingsheng
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